Flexible Oxide-Based Thin-Film Transistors on Plastic Substrates for Logic Applications

Phosphorus doped（P-doped） nanogranular SiO2 films have been deposited by plasma-enhanced chemical vapor deposition. A high proton conductivity of;.2x10-4S/cm and a large electric double layer（EDL） capacitance of;.2μF/cm2 have been obtained. Flexible coplanar-gate EDL thin film transistors（TFTs） gated by P-doped nanogranular SiO2 films are self-assembled on plastic substrates at room temperature. Due to the big EDL capacitance,such TFTs show ultra-low voltage operation of 1 V,a large field-effect mobility of 18.9 cm2/Vs,a small subthreshold swing of 85 m V/decade and a high current on/off ratio of 107. Furthermore,the EDL TFT could work in dual coplanar gate mode. AND logic operation is realized. Our results demonstrate that such TFTs gated by P-doped nanogranular SiO2 films have potential applications in low-power flexible electronics.

Phosphorus doped(P-doped) nanogranular SiO2 films have been deposited by plasma-enhanced chemical vapor deposition. A high proton conductivity of ~3.2x10-4S/cm and a large electric double layer(EDL) capacitance of ~3.2μF/cm2 have been obtained. Flexible coplanar-gate EDL thin film transistors(TFTs) gated by P-doped nanogranular SiO2 films are self-assembled on plastic substrates at room temperature. Due to the big EDL capacitance,such TFTs show ultra-low voltage operation of 1 V,a large field-effect mobility of 18.9 cm2/Vs,a small subthreshold swing of 85 m V/decade and a high current on/off ratio of 107. Furthermore,the EDL TFT could work in dual coplanar gate mode. AND logic operation is realized. Our results demonstrate that such TFTs gated by P-doped nanogranular SiO2 films have potential applications in low-power flexible electronics.