摘要
采用射频磁控溅射法在玻璃衬底上制备了ZnO∶Ga透明导电薄膜(GZO)。通过X射线衍射(XRD)、四探针电导率测试、紫外可见分光光度等表征方法研究了溅射功率对薄膜结晶特性及光电性能的影响。结果表明:当溅射功率180W时制备的GZO薄膜光电性能最优,方块电阻为9.8Ω/sq,电阻率为8.6×10-4Ω·cm,霍尔迁移率为12.5cm2/V·s,载流子浓度为5.8×1020cm-3,可见光透过率超过92%。另外,研究了最优制备条件下的GZO薄膜的高温稳定性,在氩气、氧气和真空气氛下分别对薄膜进行退火处理。结果表明,氩气退火的薄膜电学性能显著提高,是显著改善GZO薄膜性能的有效方法之一;氧气退火不利于薄膜的导电性;真空退火介于两者之间。
Ga-doped ZnO(GZO)transparent conductive films were deposited on glass substrates by radio frequency(RF)magnetron sputtering.Structural and electrical properties of GZO films were investigated in detail.Films deposited at 180 Wexhibit the lowest sheet resistivity of 9.8Ω/sq,resistivity of 8.6×10-4Ω·cm with a Hall mobility of 12.5cm2/V·s and carrier concentration of 5.8×1020cm-3.The optical transmittance of the GZO film prepared at optimum condition is over 92%.In addition,stability of the GZO films under high temperature was studied.Argon,oxygen and vacuum annealing treatments were used on the optimalfilm respectively.The electrical performance of argon annealed film is significantly improved,while the oxygen annealing is unfavorable to the conductivity of membrane.The electrical performance of the vacuum annealed sample is just between the argon and oxygen annealed ones.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2014年第6期845-847,907,共4页
Journal of Materials Science and Engineering
基金
国家自然科学基金重大研究计划资助项目(91333203)
国家自然科学基金资助项目(51172204)
浙江省科技厅资助项目(2010R50020)
关键词
ZnO∶Ga
磁控溅射
电学性能
功率
退火
Ga-doped ZnO(GZO)
magnetron sputtering
electrical properties
sputtering power
annealing
