用放电等离子烧结的BaS:Eu片组成的复合靶溅射制备BaAl2S4:Eu薄膜(英文)

BaAl_2_4:Eu Thin Films Sputtered by Complex Target with Spark Plasma Sintered BaS:Eu Pellets

采用放电等离子烧结方法烧制BaS:Eu片,将该片嵌入铝靶中,溅射制备BaAl_2S__4:Eu薄膜。在制备的所有薄膜中均有BaAl_2S__4:Eu存在,当嵌入的BaS:Eu片数量大于3时,还有BaAl_2S__7生成。薄膜被氧化后会产生BaAl_2O_4、BaSO_4和Al_2O_3。随着嵌入BaS:Eu片数量的增加,钡的硫代铝酸盐(包括BaAl_2S__4:Eu和BaAl_4S_7)的含量增加,而A1_2O_3和BaS的含量降低。在复合靶中嵌入更多的BaS:Eu片,薄膜中的Al和Ba的元素比趋近2.0,光的发射谱谱峰趋于470nm。因此,在复合靶中增加BaS:Eu片的数量可以得到更好的BaAl_2S__4:Eu薄膜,放电等离子烧结技术适用于合成用于溅射制备BaAl_2S__4:Eu薄膜的靶材。

BaS:Eu pellets were sintered by spark plasma sintering(SPS),and BaAl_2S_4:Eu thin films were deposited by sputtered BaS:Eu pellets embedded in Al target.BaAl_2S_4 is found in each thin film sample while BaAl_4S7 appears in the samples only when the amount of BaS:Eu pellets is larger than 3.Oxidized products are BaAl_O_4,BaSO_4 and Al_2O_3.The components of barium thioaluminates including BaAl_2S_4 and BaAl_4S7 increases while that of Al_2O_3 and BaS decreases when the amount of BaS:Eu pellets increases.The Al/Ba ratio in thin films and the emission peak approach 2.0 and_470 nm,respectively,and the better Eu doped barium thioaluminate thin films are achieved when more BaS:Eu pellets are embedded in the target during sputtering.Spark plasma sintering technology is suitable for production of the targets used for the sputtering deposition of BaAl_2S_4:Eu thin films.