MgZnO薄膜的准分子激光晶化(英文)

Excimer Laser Crystallization of MgZnO Thin Films

利用KrF准分子激光,在室温下对PLD法制备的MgZnO薄膜进行激光退火处理,研究了激光能量密度为50~167 mJ/cm^2时对薄膜结晶性能的影响,并用XRD、AFM、透射光谱等测试手段对薄膜进行表征。结果表明,在能量密度为125 mJ/cm^2时,薄膜具有最佳结晶效果。由于激光具有良好的可控性,可以实现区域选择性退火。本实验为维持较低的基底温度下实现MgZnO薄膜的退火处理提供了参考。

KrF excimer laser annealing was performed to MgZnO films prepared by PLD method at room temperature.The laser intensity is in the range of 50~167 mJ/cm^2.XRD,AFM and optical transmittance analysis were used to characterize the samples.Results show that at proper laser intensity of 125 mJ/cm^2 in this experiment,the film reaches highest crystallinity.Controllable laser beam can be used for area selective annealing for the film.Our work provides a reference to improve crystalline quality of MgZnO film by laser annealing.