CIGS粉体的合成与表征(英文)

Synthesis and Characterization of CIGS Powder

Cu(InxGa1-x)Se2（CIGS）是四面体黄铜矿结构的半导体材料,因为效率高、反射少而成为太阳能电池热点材料,通过简单方便的溶剂热方法合成CIGS粉体。采用XRD对合成的粉体进行了表征,结果表明,随着温度变化,粉体中的组成也发生变化,当反应温度为150℃时,包含CIGS相和其它相,当反应温度升为1 80℃时,主要成分为CuGaSe2和Ga2Se3相。当反应温度为200℃时,主要成分为CuGa0.3In0.7Se2和CuSe4。当反应温度为230℃时,形成单相C1GS,通过SEM和ICP,对单相CIGS进行了表征,SEM结果表明CIGS粒子的尺寸为100500 nm。ICP结果表明CIGS的结构为CuIn0.43Ga0.28Se1.65。

CuInGaSe2(CIGS),which belongs to the family of semiconducting materials of the tetragonal chalcopyrite structure,has emerged as a leading material for high efficiency and radiation-hard solar cell application.The CIGS powder was synthesized by a relatively simple and convenient solvothermal synthesis method.X-ray powder diffraction(XRD) was adopted for the characterization of the as-synthesized powder.It was concluded that the powder has different component with the reactive temperature changing.It contained CIGS and other phases when it was synthesized at 150 ℃.When the reactive temperature increased to 180 ℃,the major product was CuGaSe_2 and Ga_2Se_3,the major product contained CuGa_(0.3)In_(0.7)Se_2 and Cu_7Se_4 when the reactive temperature was 200 ℃,and the single phase CIGS were obtained at 230 ℃.The as-synthesized powder was characterized by SEM and ICP.SEM results showed that the size of 100-500 nm crystal was formed when the reactive temperature was 230 ℃.ICP results indicated that the composing of crystal was Cu In_(0.43) Ga_(0.28)Se_(1.65).