Reduction of insertion loss after annealing of silicon oxynitride optical waveguides
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1祖继锋,余宽豪.氮氧化硅光波导的制作途径、性质及应用[J].半导体技术,1998,23(1):10-14.
-
2Da Chen,Shihua Huang,Lü He.Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film[J].Journal of Semiconductors,2017,38(4):23-26.
-
3本刊通讯员.台积公司将28nm制程定位为全世代制程[J].电子与封装,2008,8(11):46-46.
-
4光波导材料与制备[J].中国光学,1999(2):54-54.
-
5胡龙,徐学文,卢遵铭,范英,李养贤,唐成春.Luminescence of Ce^(3+) in lanthanum silicon oxynitride[J].Chinese Physics B,2010,19(12):544-548.
-
6王淑敏.衰减的计量与测试[J].电讯工程,2006(2):27-34.
-
7长家武彦,谷宇章,龚健.DWDM Filter的测量与自动化[J].光学仪器,2001,23(5):120-126.
-
8Electro光纤反射镜交换器[J].电子产品世界,2006,13(09X):43-43.
-
9Krytar双向功率分配器/结合器[J].电子产品世界,2006,13(09X):51-51.
-
10刘宪鹏,糜元根.一种新型DGS微带带通滤波器的设计[J].微计算机信息,2008,24(36):264-265.