摘要
ＮｅｗｄａｒｋｃｕｒｒｅｎｔｃｏｍｐｏｎｅｎｔｏｆＩｎＧａＡｓ／ＩｎＰＨＰＤｓｃｏｎｆｉｒｍｅｄｂｙＤＬＴＳＷＡＮＧＫａｉｙｕａｎ，ＸＵＷｅｉｈｏｎｇ（Ｄｅｐｔ．ｏｆＥｌｅｃｔｒｏｎｉｃＥｎｇｉｎｅｅｒｉｎｇ，ＳｏｕｔｈｅａｓｔＵｎｉｖｅｒｓｉｔｙ，...
The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure the In_(0.47)Ga_(0.53)As/InP HPDs. An electronic trap which has a thermal activation energy of O.44 eV, level concentration of 3.10×10￣(13)cm￣(-3) and electronic capture cross section of 1.72×10￣(12)cm￣2 has been found.It's existence results in the new tunnelling current.
