摘要
The hole injection,the radiative recombination and the device luminescent efficiencies of amorphous silicon carbide thin film p-i-n junction light emitting diodes are quantitatively calculated,and the effect of the carrier(especially the hole) injection and recombination processes on the device luminescent characteristics are revealed.Without considering the device junction temperature,it is found that the device luminescent efficiency mainly depends on the hole injection efficiency at low field and the hole radiative recombination efficiency at high field respectively.The theoretical analyses are in well agreement with the experimental results.
Ｅｆｆｉｃｉｅｎｃｙａｎａｌｙｓｉｓｏｆａ－ＳｉＣ：ＨｔｈｉｎｆｉｌｍｌｉｇｈｔｅｍｉｔｔｉｎｇｄｉｏｄｅｓＺＨＯＵＹａｘｕｎ（Ｄｅｐｔ．ｏｆＰｈｙｓｉｃｓ，ＮｉｎｇｂｏＵｎｉｖｅｒｓｉｔｙ，Ｎｉｎｇｂｏ３１５２１１，Ｚｈｅｊｉａｎｇ，ＣＨＮ）Ａｂｓ...
