摘要
We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.
１０ＷＱＣＷｏｐｅｒａｔｉｏｎｏｆａｐｒｏｔｏｎｉｍｐｌａｎｔｅｄＧａＡｌＡｓｄｉｏｄｅｌａｓｅｒａｒｒａｙＺＨＡＮＧＤａｏｙｉｎ；ＨＵＳｉｑｉａｎｇ；ＭＨＯＱｉｎｇｆｅｎｇ（ＣｈｏｎｇｑｉｎｇＯｐｔｏｅｌｅｃｔｒｏｎｉｃｓＲｅｓｅａｒｃｈＩｎｓｔｉ...
