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High performance superluminescent diodes at 1.3μm wavelength

High performance superluminescent diodes at 1.3μm wavelength
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摘要 Highperformancesuperluminescentdiodesat1.3μmwavelengthZHUZhiwen;CAIHaiqing(ChongqingOptoelectronicsResearchInstitute,Yongchua... The design,fabrication and performance of 1.3μm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried crescent structure similar to a laser diode is introduced to achieve high output power.The output power of about 70O μW is coupled into a single-mode fiber at 150 mA and 25℃.Spectrum width is more than 30 nm.The devices operate in superluminescent state in the range from 0℃ to 60℃.
出处 《Semiconductor Photonics and Technology》 CAS 1995年第1期62-66,共5页 半导体光子学与技术(英文版)
关键词 半导体 超冷光二极管 传感器 光纤回转仪 Semiconductor Devices,Superluminescent Diodes,Sensors,Fibre Optic Gyros.
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