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Silicon Film Fabrication by Liquid Phase Epitaxy at Low Temperature 被引量:1

Silicon Film Fabrication by Liquid Phase Epitaxy at Low Temperature
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摘要 SiliconFilmFabricationbyLiquidPhaseEpitaxyatLowTemperature①QIANYongbiao,SHIWeimin,CHENPeifeng,MINJiahua,GUYongming,GUOYanming... Low temperature liquid phase epitaxy of silicon thin films was successfully carried out at a temperature of (400~500)℃,using Au/Bi alloy as a Si-saturated Sn solution was used to protect the substrate surface,preventing effectively the oxidation of silicon.The grown Si thin films were identified by SEM,AES and C-V measurements.
出处 《Semiconductor Photonics and Technology》 CAS 1998年第1期18-24,共7页 半导体光子学与技术(英文版)
关键词 低温 液相外延 太阳能电池 Low Temperature LPE,Silicon Film,Solar Cell
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