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Studies on Three-electrode Semiconductor Laserss

Studies on Three-electrode Semiconductor Lasers
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摘要 Using the ray trace method, three-section semiconductor lasers are studied. An analytic expression of output power for the three-section semiconductor lasers is derived for the first time. From this expression, threshold condition is also obtained. Using the ray trace method, three-section semiconductor lasers are studied. An analytic expression of output power for the three-section semiconductor lasers is derived for the first time. From this expression, threshold condition is also obtained.
出处 《Semiconductor Photonics and Technology》 CAS 1998年第2期74-77,98,共5页 半导体光子学与技术(英文版)
关键词 光输出功率 射线法 半导体激光器 Optical Output Power, Ray Method, Semiconductor Laser
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参考文献1

  • 1R. F. O’Dowd,M. G. Davis. Theoretical study of a two-section single-cavity semiconductor laser for use as a wavelength-tunable source[J] 1988,Optical and Quantum Electronics(5):383~393

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