摘要
We have measured the deep energy level of the InP: Fe which is semi -insulator through the method of OTCS. The effect of light intensity on OTCS measurement is mainly discussed. There are electron trap of E_T =0.34 eV and hole trap of E_T = 1.13 eV in InP: Fe under the strong light and low temperature. The location of the OTCS peak of electron trap (E_T = 0.34 eV) moves towards the direction of high temperaturer, when the light intensity was increased, E_T is different under different light intensity. It is corrected in terms of theory that the stuff ratio of the deep energy level is affected by the light intensity. The experiments show that the error is decreased greatly with the correction.
We have measured the deep energy level of the InP: Fe which is semi -insulator through the method of OTCS. The effect of light intensity on OTCS measurement is mainly discussed. There are electron trap of E_T =0.34 eV and hole trap of E_T = 1.13 eV in InP: Fe under the strong light and low temperature. The location of the OTCS peak of electron trap (E_T = 0.34 eV) moves towards the direction of high temperaturer, when the light intensity was increased, E_T is different under different light intensity. It is corrected in terms of theory that the stuff ratio of the deep energy level is affected by the light intensity. The experiments show that the error is decreased greatly with the correction.
关键词
杂质能级
测量
光瞬态电流光谱
半导体材料
磷化铟
Impurity Level, Measurement, Optical Transient Current Spectroscopy, Semiconductor Materials
