摘要
介绍了近场光学及近场探测的原理 ,给出了其用于光电器件研究中的一些结果。近场光学方法具有超衍射分辩的本领和纳米局域光场探测的能力 ,适用于多种光电材料的探测与表征 ,包括 :LD、光纤波导器件、光子晶体器件等。纳米局域光场和倏逝场的探测发现了许多远场探测无法得到的结果 。
Due to the invention of scanning near-field optical microscopy(SNOM),resolution at 50-100nm level using visible or near infrared light is now practical. The SNOM technique as well as its application to the characterization of photonic materials and devices are reviewed. Several examples such as semiconductors, waveguide device and photonic crystal are discussed. Detection of nanometer location of optical field and evanescent field can show many results which can not be found in far field, provides an effective technique for characterization of photoelectrical materials in nanometer scale.
出处
《光学技术》
CAS
CSCD
2002年第5期412-418,共7页
Optical Technique
基金
国家重点基础研究发展规划项目 (973)资助 (项目号 :G1 9990 330 0 0 2 )
清华大学 985学科建设光存储项目资助
关键词
纳米光学
近场光学
半导体激光器
光子晶体
光电材料
光电器件
nano-optics
near-field optics
detection and characterization
semiconductor laser diode
photonic crystal
