ZnSe及ZnSe基异质结构中电子迁移率随静压之变化

<title>HYDROSTATIC PRESSURE DEPENDENCE OF THE ELECTRON MOBILITIES OF ZnSe AND ZnSe-BASED HETEROSTRUCTURES

考虑压力对有效质量的影响,讨论电子迁移率随压力的变化,分别计算并比较了体ZnSe、ZnSe/GaAs外延层以及ZnSe/ZnS超晶格系统中电子迁移率随压力的变化,提出了非自由基超晶格系统的等效外延层模型.研究表明,内部应变和衬底对系统的电子迁移率随压力变化有重要影响,自由基和非自由基系统中电子迁移率的压力特性有很大区别.

<Abstrcat> The effects of hydrostatic pressure on the electron mobility are studied by considering the pressure dependence of the electron effect mass.The pressure induced changes of the mobilities for bulk ZnSe,ZnSe epilayer(on GaAs) and the ZnSe/ZnS superlattice are calculated numerically.The effective epilayer model for the nonfreestanding superlattice is proposed.It is shown that the effects of the internal buildin strain and the substrate are very important.There is a great difference for the pressure dependence of electron mobilities between the freestanding and the nonfreestanding superlattice systems.