SiC衬底上近自由态石墨烯制备及表征的研究进展

Progress in Fabrication and Characterization of Quasi-free Standing Graphene on SiC Substrate

石墨烯材料自问世以来,一直处于学界研究的焦点,在微电子器件领域,通过Si C衬底制备的近自由态石墨烯具有较大的应用潜力。本文介绍了Si C热解法制备石墨烯的优势与劣势,说明了近自由态石墨烯制备的原因。综合阐述了目前制备近自由态石墨烯的常用方法,并对比了各种制备方法的特点。最后,概述了近自由态石墨烯的常用表征手段。

Graphene has been a research hotspot since its discovery. In the field of microelectronics,quasi-free standing graphene growth on Si C substrate is of great potential. In this paper,the advantages and disadvantages of graphene grown by thermal decomposition of Si C were described,and the reasons for the fabrication of quasi-free standing graphene were shown. Then,the common means of producing quasifree standing graphene were summarized, and characteristics of different fabrication routes were contrasted. At the end of the paper,the methods to characterize quasi-free standing graphene were briefly introduced.