DAMAGE DISTRIBUTION OF LiNbO_3 CRYSTAL INDUCED BY C^+ IMPLANTATION

The Y-cut X propagating LiNbO3 crystals were implanted with a fluence of 5×10^13-5×10^14 C ions/cm^2 at energies from 100 to 200keV,respectively,The implanted LiNbO3 Crystals were analyzed using Rutherford backscattering/Channeling technique,The result shows that:(1)the damage rages are systematically higher than the projected ranges calculated from TRIM(Transport of Ions in Matter) simulation,and the damage widths are significantly broader than TRIM values;(2) the total disorder induced by carbon ion in LiNbO3 is not linearly increased with the implanted fluence.

The Y-cut X propagating LiNbO3 crystals were implanted with a fluence of 5×10~13-5×10~14 C ions/cm2 at energies from 100 to 200keV, respectively. The implanted LiNbO3 crystals were analyzed using Rutherford backscattering/Channeling technique. The result shows that: (1) the damage ranges are systematically higher than the projected ranges calculated from TRIM (Transport of Ions in Matter) simulation, and the damage widths are significantly broader than TRIM values; (2) the total disorder induced by carbon ion in LiNbO3 is not linearly increased with the implanted fluence.