Effects of thickness on cubic GaN nucleation layers on GaAs（001） substrates

The effects of growth time on the structure and morphology of cubic GaN nucleation layers on GaAs(001)substrates by metalorganic chemical vapor deposition (MOCVD) have been investigated using a synchrotron X-ray diffraction(XRD).The XRD results show that the GaN 111 reflections at 54.75° inχ are a measurable component,however the 002 reflections parallel to GaAs(001) surface are not detected.The XRD Φ scans and pole figures give a convincing proof that the GaN nucleation latyers show exactly the cubic symmetrical structure.The coherence lengths along the close-packed<111> direction estuimated from the 111 peak are nanometer order of magnitude,The optimal photoluminescence (PL) spectrum was obtained from the cubic GaN epilayer deposited on the nucleation layer for 60sec.