Ga_xIn_(1-x)As/GaInAsP应变量子阱结构能带的计算

Calculation of band structure of Ga_x In_1-x_As/GaInAsP strained quantum wells

对含有Luttinger-Kohn哈密顿量的有效质量方程,利用S.L.Chuang提出的传递矩阵法,计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带,该结构可被选作980nm光通信泵浦激光器的有源层。研究还得到了GaxIn1-xAs/GaInAsP双应变量子阱结构中电子和空穴的能级以及能级的色散关系。

The band structure of Ga x In 1-x As /GaInAsP strained quantum wells i s calculated by using Luttinger -Kohn Hamiltonian -based propagation -matrix method pr esented by S.L.Chuang.This kind band structure can be chose n as an active layer of 980nm pump lase r for optical com -munications.The energy levels of electrons and holes in Ga x In 1-x As /GaInAsP strained quantum wells,as well as their dispersion re lations are obtained.