碳化硅吸波性能改进的研究

Study on property improvement of SiC wave absorbers

采用三种不同的方法对碳化硅粉在2-18GHz范围的吸波性能进行了改进。化学还原的方法制备出粒度约为0.2μm左右的超细镍粉,与碳化硅混和,在一定的配比下制备成吸波涂层材料,大幅度改善了吸波性能。吸波涂层最小反射率能够达到-23.59dB。提出了微观层复合的设想,并利用化学镀的方法对碳化硅粉表面进行了改性处理,使金属镍沉积在碳化硅颗粒的表面,材料在合理配比下的最小反射率为-22.07dB。采用宏观层复合的方法,将超细镍粉涂层与碳化硅涂层复合制备成多层吸波材料,改善了吸收峰值和吸收带宽。

Three different ways were proposed to improve the wave absorbing properties of SiC within the frequency ranges from 2GHz to 18GHz.Adding 10%nickel powder with average size of 0.2μm to 80%of SiC by weight ,the absorbing properties are greatly improved,an d the lowest reflection is-23.59dB at 11.35GHz with the thickn ess of 0.67mm.A microscopic multi -l ayer was prepared by electroless nickel plating on the su rface of SiC particles,which exibits lower reflection of -22.07dB with the thickness of 0.35mm and 60%b y weight at 16.24GHz.Furthermore,b etter characteristics of reflection and broader frequency ranges are obtained by a macroscopic multi -layer constructed with different ranking of nickel and SiC l ayers.