Zn_xCd_(1-x)S薄膜的制备及其光电性质的研究

The Preparation and Photoelectrical Charaterizatoins of Zn_xCd_(1-x) S Thin Film

用化学池沉积法制备了不同锌含量的 Znx Cd( 1 -x) S薄膜 ,并阐述了不同锌含量对薄膜性能的影响及其原因。通过 X射线衍射、扫描电镜、光谱透过率等测试方法表明 ,在 0 .4<x<0 .6(摩尔百分比 )时 ,薄膜有较大的晶粒和较小的电阻 ,可望替代部分 Cd

Thin film of Zn x Cd (1- x ) S(0≤ x ≤1.0) were prepared by chemical bath deposition, The influence and it's cause of various zinc content to the film was explained. The XRD,SEM and transmission spectra reveals that the Zn x Cd (1- x ) S thin film have more large grain size and low resistance when the x is between 0.4 and 0.6 ,so it is hoped to replacement CdS and used in solar cells.