工作气压对制备立方氮化硼薄膜的影响

Influence of Working Gas Pressure on the Preparation of Cubic Boron Nitride Thin Films

用射频溅射法将立方氮化硼（C-BN）薄膜沉积在p型Si（100）衬底上,薄膜的成分由傅里叶变换红外吸收谱和X射线衍射谱标识.在其他条件不变的情况下,研究了工作气压对制备立方氮化硼薄膜的影响.研究结果表明,工作气压是影响c-BN薄膜生长的重要参数,要得到一定立方相体积分数的氮化硼薄膜,必须要有合适的工作气压.工作气压等于或高于2.00Pa时,立方相不能形成;工作气压为 0.67Pa时,得到了立方相体积分数为92％的立方氮化硼薄膜.

The cubic boron nitride (c-BN) thin films were deposited on p-type Si (100) substrates by means of radio frequency sputtering. The films were characterized by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) spectra. The results indicate that the working gaspressure is the important factor for preparing cubic boron nitride thin films. In order to obtain cubic boron nitride thin films the working gas pressure must be appropriate, otherwise the cubic phase can not be synthesized. At 0.67 Pa of working gas pressure, the cubic boron nitride thin films that contain92% cubic phase content can be successfully synthesized.