多晶硅/氧化硅界面的二次离子质谱分析

Investigation of the poly-Si/SiO2interface using secondary ion mass spectroscopy

利用二次离子质谱仪对多晶硅/氧化硅界面进行分析,发现多晶硅/氧化硅界面不是突变的,而存在着一个过渡区;根据多晶硅薄膜的成核理论,分析该过渡区形成的物理起源和机理,并利用“氧化层电导”模型,定量分析过渡区对器件栅氧化层电导的影响。

The secondary ion mass spectroscopy has been used to investigate the poly-Si/SiO2interface. It is found that the poly-Si/SiO2 interface has a transition region instead of changingabruptly. The physical origin and mechanism of forming this region has been studied according tothe nucleation theory of polysilicon film. The influence of the transition region on gate oxide layerconductance of device has been analyzed quantitatively by using'oxide_layer conductance'model..