摘要
论述了低压大电流行业所用整流二极管的超大电流密度、超低功耗设计的重要性。介绍了设计方法、工艺措施及实验结果。分析表明,只要保证基区宽度不大于小电流下的载流子扩散长度,保证足够的表面扩散浓度,就能保证二极管在1000A/cm2的特大电流密度下仍有很低的压降。
This paper discusses the low breakover voltage diode with very large currentdensity and very low voltage drop. The design, technology and tests are introduced. The resultsindicate: it is able to remain very low voltage drop at the current density 1000A/cm2, as the enoughsurface concentration is performed and the width of base is less than the twice bipolar diffusionlength at the low current density.
出处
《半导体技术》
CAS
CSCD
北大核心
2002年第10期68-72,共5页
Semiconductor Technology