薄膜厚度对Ag-MgF_2金属陶瓷薄膜内应力的影响

EFFECT OF THICKNESS ON RESIDUAL STRESS IN Ag-MgF_2 CERMET FILMS

用电子薄膜应力分布测试仪测量了薄膜厚度对 Ag- Mg F2 金属陶瓷薄膜内应力的影响 ,结果表明 :薄膜厚度在 130 nm、2 0 .4m m选区内的薄膜平均应力最小 ,应力分布比较均匀 ,应力为压应力。XRD分析表明 ,当薄膜厚度在 70～ 40 0 nm范围内 ,Ag- Mg F2 薄膜中的 Ag的晶格常数变化比较大 ,说明 Ag晶粒结构对薄膜结构的影响较大 。

The effect of thickness on the residual stress and microstructure of Ag-MgF\-2 cermet films prepared by vapor deposition is introduced. The X-ray diffraction(XRD) technique was employed to study the microstructure of the films. The results show that the average stress over a φ20.4 mm round area is the least and the residual stress of the films appears to be press stress at 130 nm thickness.The rule of chang rate of crystal lattice constants of Ag with thickness accord with that of residual stress of film. The effect of Ag grain structure on the residual stress and microsturcture of Ag-MgF\-2 films is greater than that of MgF\-2.