摘要
利用中频脉冲磁控溅射工艺制备ITO薄膜,研究了在衬靶间距为60 mm、衬底温度为350℃、溅射功率为120 W、溅射气压为0.2 Pa的条件下,氧氩比(O2/Ar)、溅射时间对ITO薄膜表面形貌、膜厚、沉积速率及光电性能的影响。通过实验和分析,最终确定了在玻璃衬底上制备ITO薄膜的最佳氧氩比和溅射时间:氧氩比为0.4:40,溅射时间为45 min,获得了方阻为2.55Ω/□,电阻率为1.46×10-4Ω·cm,可见光范围内平均透过率为81.2%的薄膜。
The effects of sputtering time and proportion of oxygen and argon gas on properties of ITO thin films deposited by Mid-Frequency Pulsed Magnetron Sputtering were investigated while the substrat tem perature was350 ℃, sputtering power was 120W and sputtering pressure was 0.2 Pa.Through experim ents and analysis, the optimum sputtering time and proportion of oxygen and argon gas of depositing ITO thin lms was achieved:proportion of oxygen and argon gas is 0.4:40 and the sputtering time is 45min. High quality ITO thin films with the sheet resistance of 2.55 Ω/□, the resistivity of 1.46x10-4 Ω·cm and the optical transm ittance of 81.2 % in the visible spectrum range w ere obtained.
出处
《电子工业专用设备》
2014年第10期8-13,共6页
Equipment for Electronic Products Manufacturing
关键词
ITO薄膜
氧氩比
溅射时间
ITO thin films
proportion of oxygen and argon gas
sputtering time
