最小二乘法在抛光设备压力控制中的应用

Application of Least Square Method in the Pressure Control of Polishing Equipment

在化学机械抛光(CMP)过程中,压力是影响晶片最终抛光效果的主要因素之一,采用合理的压力控制方法,把压力控制在一定的范围内才能满足化学机械抛光的工艺要求。运用最小二乘法拟合曲线的算法实现压力值精确控制的设计方法,并通过MINITAB仿真及抛光实验验证其可行性。

The pressure is one of the main factors which have an effect on the sapphire polishing in the CMP process. In order to meet the requirements of CMP,we need to use a reasonable method for pressure control and control the pressure within a certain range. This paper introduces the design and realization method of accurate pressure control using a least squares curve fitting algorithm,through minitab simulation and polishing experiments to verify its feasibility.