摘要
用电阻丝加热蒸发，可作出合Si量为1％左右的Si／Al膜，能防止“Al钉”对结的破坏，采用适当的合金条件可作出良好欧姆接触，本文着重介绍了这种Si／Al膜的特性。
Si/Al films containing about 1% of Si have been coated using resistance wire heated evaporation, which can be used to prevent the Al spikes from damaging the junctions. Good ohmic contacts have been made under proper annealing conditions. In this paper, properties of the Si/Al film are analyzed and discussed.
出处
《微电子技术》
1998年第3期15-21,共7页
Microelectronic Technology
