掺杂多晶硅发射极技术研究

Study on Technology of Doped Poly-Silicon Emitter

本文讨论了掺杂多晶硅发射极工艺技术中的关键影响因素：LPCVD条件、多晶硅股厚、前处理方法、多晶硅膜形成以后的运火状态，并给出了实验结果及流行的理论解释，为采用多晶硅发射极技术进行的集成电路生产和科研提供了一定的参考和技术支撑。

Some critical processes have been discussed: LPCVD, the thickness of Poly Si, the methods of wet chemical cleaning before Poly-Si deposition, the annealing after doposition of Poly-Si. And the experimental results and the predominent theories are presented. These will give some references to the manufacture and research of integrated circults.