I/f噪声源及MOS器件中的1/f噪声

1/f Noise Sources and 1/f Noise in MOSFET

1／f噪声，由于其反映了器件的质量、可靠性等参数，其研究越来越为人们所重视。本文首先较为系统地介绍了1／f噪声源两种较为成熟的理论：载流子数涨落和迁移率涨落模型，最后将研究MOS晶体管中1／f噪声的现象。在n管中，较为成功地用△N模型；而在PMOS晶体管中，△μ模型可较为成功地解释其1／f噪声特性。

The 1/f noise as a diagnstio tool for quality and reliability of electronic devicesis used successflly. This Paper presents the consequence of models based on carrier number△N and mobility fluctations △μ. The phenomenon of 1/f noise in MOST’S are studied. Experimentals results suggest that 1/f noise in n - MOST’S is dominated by △N while in p -MOST’S the noise is due to △μ.