摘要
A novel Schottky body-contacted structure for partially depleted SOI nMOSFET's is presented.This structure can be realized by forming a shallow n +-p junction and two sidewall spacers in the source region,and then growing a thick silicide film,which can punch through the shallow junction and make a Schottky contact to the p-type silicon.Simulation results show that the anomalous subthreshold slope and kink effects are suppressed successfully and the drain breakdown voltage is improved considerably.This method has the same device area and is completely compatible with the bulk MOSFET process.
提出了一种新型的Schottky体接触结构 ,能够有效抑制部分耗尽SOInMOSFET的浮体效应 .这种结构可以通过在源区形成一个浅的n+ p结和二次侧墙 ,然后生长厚的硅化物以穿透这个浅结的方法来实现 .模拟结果表明这种结构能够成功抑制SOInMOSFET中存在的反常亚阈值斜率和kink效应 ,漏端击穿电压也有显著提高 .这种抑制浮体效应的方法不增加器件面积 ,而且与体硅MOSFET工艺完全兼容 .
