摘要
利用霍尔效应、电流 电压 (I V)、光致发光谱 (PL)和光电流谱 (PC)研究了不同掺铁浓度的半绝缘InP的性质 .半绝缘InP的I V特性明显地依赖于掺铁的浓度 .掺铁的浓度也对半绝缘InP的光学性质和材料中缺陷的形成有影响 .用PL和PC分别研究了掺铁半绝缘InP的禁带收缩现象和材料中的缺陷 .
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect,current-voltage ( I-V ),photoluminescence spectroscopy (PL) and photocurrent spectroscopy(PC)measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration.Fe doping concentration also influences optical properties and defective formation in as-grown SI InP.Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PL and PC.
