摘要
采用真空热蒸发与PECVD方法 ,在经特殊设计的“单反应室双沉积”设备中沉积了Al/a Si∶H复合薄膜 ,并利用扫描电子显微镜、X射线衍射、Raman及X射线光电子谱等方法对复合薄膜在不同Al层厚度和不同温度退火后的晶化及电导行为进行了研究 .结果表明 ,Al/a Si∶H复合薄膜在不高于 2 5 0℃的退火条件下即开始出现硅的晶体相 .退火温度越高 ,Al层越厚 ,形成多晶硅的量越多 .Al/a Si∶H复合薄膜的电导率受Al原子在a Si∶H中掺杂效应的影响 ,比纯a Si∶H薄膜的大 .随着硅晶体相在复合薄膜中的生成 ,复合薄膜的电导率受晶相比控制 ,晶相比增加 ,电导率增大 .
Al/a-Si∶H bilayer thin film is deposited on glass substrate by thermal evaporation and plasma-enhanced chemical-vapor-deposition (PECVD) in a one-chamber deposition apparatus specially designed.Scanning electron microscopy (SEM),X-ray diffraction (XRD),Raman and X-ray photoelectron spectroscopy (XPS) are used to observe the morphology,crystallization and the shift of Si2p binding energy respectively.The results show that a-Si∶H can be crystallized at temperature of 250℃ at most in Al/a-Si∶H bilayer films,the amount of crystalline Si increases with the increase in both the thickness of Al sublayer and the annealing temperature.The conductivity of Al/a-Si∶H bilayer films is also much higher than that of pure a-Si∶H while Al doping into a-Si∶H matrix.Meanwhile,as the crystalline Si phase appeared in Al/a-Si∶H films,the conductivity of Al/a-Si∶H bilayer films increases with increasing of the amount of crystalline Si.
基金
国家自然科学基金 (批准号 :6 9776 0 0 4
6 9890 2 30 )
教育部重点基础研究基金资助项目~~
