摘要
采用射频磁控共溅射法在硅衬底上沉积Cu/SiO2复合薄膜,然后在NH3保护下高温退火,再于空气中自然冷却氧化,形成CuO结构,对其微观结构进行分析。随着退火温度的升高,CuO由单斜晶相逐渐转变为立方晶相,CuO薄膜结晶质量提高。样品于900℃和1 100℃退火后,形成有序散落的微米级颗粒,前者由粒状团簇组成,颗粒表面比较粗糙,后者由片融状小颗粒融合而成,颗粒表面比较光滑。
Radio frequency(RF) magnetron co-sputtering method depositing Cu/SiO2 composite thin films on n-type Si(111) substrates,annealing at high temperature with NH3 atmosphere,then cooling and oxidation in the air to form CuO structure were presented.With the increase of annealing temperature,the structure of CuO turns from monoclinic crystal phase to cubic phase and the crystal quality of CuO thin film improves.After annealing at 900 ℃ and 1 100 ℃,ordered and scattered micro-particles are formed in samples and the former was made up of granular clusters with rough surface,the latter was constituted by flake small particles with smooth surface.
出处
《微细加工技术》
2008年第6期12-13,18,共3页
Microfabrication Technology
关键词
射频磁控共溅射法
CuO/SiO2复合薄膜
微观结构
radio frequency magnetron Co-sputtering
cupric oxide/sillica composite thin film
microstructure