基于双基区晶体管的负阻特性静态随机存储单元电路的设计

A New Design of SRAM Cell Based on Negative Resistance Characteristic of DUBAT

双基区晶体管是一种硅基三端压控型负阻器件,它的Ic—Vbe曲线具有双稳态特性。利用双基区晶体管的负阻、高速特性构成的静态随机存储电路,结构简单、器件数量少、噪声容限大抗干扰能力强、速度快。将4v时钟信号作为器件的驱动电源,降低了电路功耗。

Dual Base Transistor(DUBAT) is a silicon three-terminal voltage-controlled negative resistance device and has a bi-stability hysteresis loop in the Ic—Vbe characteristics.Applying the negative resistance and the high-speed characteristics of the Dual Base Transistors(DUBAT) to constitute the cell of the Static Random Access Memory(SRAM),which has a simple structure,a few devices,big noise margin so there's strong anti-jamming compatibility,and high-speed.Making the 4 voltage clock-signal drive the MOS FET,which reduce the power of the cell.