二元高k材料研究进展及制备

The progress and preparation of binary compound high-k dielectric

随着大规模集成电路的发展 ,需要一种高介质材料来代替传统的SiO2 ,介绍了有可能替代SiO2 的几种二元材料的研究现状 ,主要包括Si3N4 、Ta2 O5、TiO2 、ZrO2 、Y2 O3、Gd2 O3和CeO2几种材料的结构和电学性能 ,以及制备薄膜的几种方法 :蒸发法、化学气相沉积和离子束沉积。

With the progress of the ULSI, a high k material was needed to substrate the SiO 2 as gate dielectric. In this paper, some promising candidates such as Si 3N 4, Ta 2O 5, TiO 2, ZrO 2, Y 2O 3, Gd 2O 3, CeO 2 were introduced, focusing on their electric properties and structure. Some techniques used to prepare high k materials were presented, including vapor, CVD and IBD.