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H_2C_2O_4稳定剂对Sol-Gel法制备LiNbO_3薄膜的影响 被引量:1

Infection of H_2C_2O_4 as stabilizers on the LiNbO_3 thin films fabricated by sol-gel process
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摘要 研究了分别以H2 C2 O4 、HNO3、HCOOH和CH3COOH作稳定剂的LiNbO3薄膜先驱液的稳定性 ,发现H2 C2 O4 作稳定剂的先驱液的稳定性最好 ;用sol gel法在Si(110 )基板上制备了以H2 C2 O4 作稳定剂的LiNbO3薄膜 ,并对LiNbO3薄膜进行了IR、XRD和SEM表征 ,结果表明 ,生成的LiNbO3为多晶 ,与HNO3相比 ,以H2 C2 O4 作稳定剂制备的LiNbO3薄膜形貌较差。 In this paper, we studied the stability of LiNbO 3 precursor solution stabilized by H 2C 2O 4,HNO 3,HCOOH and CH 3COOH,respectively, found that the stability of LiNbO 3 precursor solution stabilized by H 2C 2O 4 was the best. LiNbO 3 thin films on Si(110) substrate were prepared by the stabilized solutions through sol gel process. The LiNbO 3thin films were characterized by IR, XRD and SEM, the results were shown that the obtained LiNbO 3 thin films were polycrystalline,and the morphology of LiNbO 3 thin films stabilized by H 2C 2O 4 was not good as that of LiNbO 3 thin films by HNO 3.
出处 《功能材料》 EI CAS CSCD 北大核心 2002年第5期524-525,531,共3页 Journal of Functional Materials
基金 国家硅材料重点实验室访问教授基金资助项目 (0 1 0 58) 国家自然科学基金资助项目 (50 0 72 0 2 3) 上饶师范学院校立科研课题资助基金项目 (0 1 1 1 )
关键词 H2C2O4稳定剂 制备 铌酸锂 薄膜 SOL-GEL法 铁电材料 LiNbO 3 thin films sol gel process H 2C 2O 4
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参考文献1

  • 1中本一雄.无机和配位化合物的红外与拉曼光谱(第4版)[M].北京:化学工业出版社,1991..

同被引文献4

  • 1Won D H, Hor N H, and No K. Effects of sol-gel processing variables on the texture growth of LiNbO3 thin film [J]. Jpn. J. Appl. phys., 1996,35(part1,1A):210-215
  • 2Partlow D P, and Greggi J. Properties and microstructure of thin LiNbO3 films prepared by a Sol-gel process[J]. J.Mater. Res., 1987,2(5): 595-605.
  • 3Ono S, and Hirano S. Synthesis of Highly Oriented lithium niobate thin film from neutralized aqueous precursor solution (J). J. Am. Ceram. Soc., 1997,80(11):2869-2875.
  • 4中本一雄.无机和配位化合物的红外与拉曼光谱(第4版)[M].北京:化学工业出版社,1991..

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