SiC MOSFET SPICE模型的建立与仿真分析

Establishment and Simulation Analysis of SiC MOSFET SPICE Model

SiC MOSFET与Si MOSFET相比,具有耐高压、耐高温、频率快等诸多优点,得到了越来越广泛的应用。SPICE模型作为含SiC MOSFET电路仿真分析的基础,对其进行研究十分必要。以SPICE 1模型为例,介绍了基于LTspice的SiC MOSFET建模流程,通过MOS、体二极管、PCB寄生参数等建模过程,完成了SiC MOSFET SPICE 1模型的建立,并通过仿真分析验证了所建立模型的正确性。

Compared with Si MOSFET,SiC MOSFET has many advantages such as high voltage resistance,high temperature resistance,fast frequency,etc.,which has been widely used.The SPICE model is the basis for the simulation analysis of SiC-containing MOSFET circuits,and its research is very necessary.Taking the SPICE 1 model as an example,this paper introduced the modeling process of SiC MOSFET based on LTspice.Through the modeling of MOS,body diode and PCB parasitic parameters,the SiC MOSFET SPICE 1 model was established and the correctness of the established model was verified by the simulation comparison in this paper.