基于体硅MEMS技术的悬浮微结构加工工艺研究

Processing of the Suspended Micro-structure Based on Bulk Silicon MEMS Technology

针对体硅MEMS加工技术的特点,确定了悬浮微结构的加工工艺流程,并对加工过程中的硅基深槽腐蚀工艺和ICP刻蚀工艺这两项关键技术及其中的重要影响因素进行了研究,得到了硅基深槽腐蚀的溶液类型、浓度和温度等工艺参数,以及ICP刻蚀工艺的功率、气体流量等工艺参数。根据优化的工艺参数,采用厚度为400μm的N型<100>硅片加工了外形尺寸为3 mm×3 mm、线宽尺寸为100±2μm、硅槽深度为390±2μm的悬浮微结构样件。

Basing on the characteristics of the Bulk Silicon MEMS fabrication technology, the process lfow for the suspended Micro-structure is obtained. Moreover, the etching technology of silicon trench and ICP etching technology as well as their inlfuencing factors are researched. A series of Parameters are ifxed, including the type, the concentration and the temperature of the etching solution, the power and the gas-lfow of the ICP etching technology. Basing on the above results, by using the N-type Si(100)substrate with the thick 400 μm, typical suspended Micro-structures are realized, which is 3 mm×3 mm with the line width 100±2 μm and the depth of the silicon trench 390±2 μm.