SiC功率器件的研发动向

The research and development trend of SiC power device

本文阐述了SiC功率器件最近的研发动向,提出了SiC与Si-IGBT的混合模块方案,对比全Si-IGBT,开关损耗能降低30%,回复损耗降低50%,可实现大电流化和成本的下降;提出了沟槽式SBD方案,因此可降低势垒高度并大幅度减小Vf。作为充分发挥SiC特点的新器件,正开发具有双向耐压、反向阻挡的RB-MOSFET,在高电压双向开发中,SiC反向阻挡MOSFET的优越性等均已得到实验证实。

This paper describes the recent research and development trends of SiC power devices, and proposes a hybrid module scheme for SiC and Si-IGBT. Compared with the full Si-IGBT, the switching loss can be reduced by 30%, and the recovery loss can be reduced by 50%, which has realize large current and cost reduction. A grooved SBD scheme is proposed to drastically reduce the barrier height and Vf. As a new device giving full play to the characteristics of SiC, RB-MOSFET with bi-directional voltage resistance and reverse blocking is being developed. The advantages of SiC’s reverse blocking MOSFET has been proved by experiments in developing bi-directional high voltage. See the text for more details.