碳化硅MOSFET的短路实验性能与有限元分析法热模型的开发

Short-circuit Experiment Performance of SiC MOSFET and Development of Thermal Model of Finite Element Analysis Method STMicroelectronics N.V.

本文分析碳化硅MOSFET的短路实验(SCT)结果。该实验的重点是在不同条件下进行专门的实验室测量,并借助一个稳健的有限元法物理模型来证实和比较测量值,对短路行为的动态变化进行深度评估。

In this paper,the short-circuit experiment(SCT)results of SiC MOSFET is analyzed.The experiment focuses on conducting special laboratory measurement under different conditions,and through a steady physical model of finite element method,verifying and comparing the measured values so as to make an in-depth assessment on the dynamic change of short-circuit behavior.