基于OLS码的检错纠错抗辐射加固设计

Design of radiation hardened error detection and correction circuit based on OLS code

由辐射粒子引起的多单元翻转(MCUs)已经成为了影响存储器可靠性的一个主要问题。而存储器抗MCUs的加固方法一般是使用可以纠正多个错误的错误纠正码(ECCs)。使用了正交拉丁方(OLS)码的故障容错系统被构造用以纠正存储器中的多个错误。OLS码是一类一步大数逻辑可译(OS-MLD)码,可以使用非常简单的大数逻辑电路来进行译码。由Verilog硬件描述语言实现设计,并且使用Model Sim进行了功能验证。

Multiple Cell Upsets( MCUs) caused by radiation is a major issue for memory reliability. An option to protect memories against MCUs is using advanced error correction codes( ECCs) that can correct more than one error. A fault- tolerant scheme is pre-sented to protect a memory from MCUs using orthogonal latin square( OLS) code. The advantage of OLS code is that it is a type of one- step majority logic decodable( OS- MLD) codes, which can be decoded using very simple majority circuit. The scheme has been implemented in Verilog HDL, and it has also been validated by Model Sim simulator.