一种应用于LTE-A的双功率模式宽带功率放大器设计

A dual power mode broadband power amplifier design for LTE-A applications

针对LTE-A移动终端应用,采用双功率模式架构设计了一款宽带功率放大器,利用功放工作模式的切换,改善了功放回退区域的效率。该功放还采用了InGaP/GaAs HBT和AlGaAs/InGaAs pHEMT的一体化工艺,将功放电路与控制电路单片集成,实现模式控制的片上切换,能有效提高功放的集成度。该功放在工作电压为3.4 V,频率2.3~2.69 GHz范围内,使用10 MHz LTE调制信号输入,在输出功率为10 dBm时,测得LPM相对于HPM效率提高至少6%,有效提高了功放功率回退时的效率,功放的性能在全频带内满足3GPP协议要求。

A broadband power amplifiers( PAs) employ dual power mode structure for LTE-A handset applications is presented. The efficiency of power amplifier improved obviously at the power back-off region through switching the operation mode of PA. By using InGaP/GaAs HBT and AlGaAs/InGaAs pHEMT in a single process, the amplifier circuit and control circuit can be integrated in a single die. In this way, the single chip mode-switching function was achieved. It can improve the amplifier integration effectively. Compare the power added efficiency of the LPM with the power added efficiency of HPM at 10 dBm output power point, the fabricated PA shows more than 6 % efficiency improvement, measured with 10 MHz LTE modulation signals at a supply voltage of 3. 4 V and at the frequency range of 2. 3 ~ 2. 69 GHz, the PA overall performance also meeting all 3GPP output spectrum mask.