具有高重复頻率和毫微秒响应的阶跃恢复二极管的新穎脉冲形成电路(第一部分)

NOVEL PULSE FORMING CIRCUITS WITH NANOSECOND RISE TIME AND HIGH-REPETITION RATE USING STEP RECOVERY DIODES

本文討論了利用二极管由正向至反向恢复的阶跃特性所构成的多种新穎毫微秒脉冲电路;指出了阶跃恢复二极管在高重复頻率毫微秒脉冲电路中应用的多种可能性;并根据电荷存儲概念对各电路的物理机构提出了定性描述。 本文所研究的电路分成三类:将高重复頻率正弦波变換成毫微秒脉冲的形成电路;将响应慢的脉冲变換成响应快的脉冲的整形电路;与晶体管配合的毫微秒脉冲发生器电路。 通过这些电路的討論,提出阶跃恢复二极管在脉冲电路中应用的重要性及潛在能力。在以后的論文中将探討其它新型电路,并对某些电路作較詳尽的分析,提供实际应用举例。

Many novel nanosecond pulse circuits with nanosecond rise time and high-repetition rate using step recovery diodes are discussed and recommended in this paper. The physical mechanisms of these circuits are described qualitatively by using the charge storage concepts and theory.The circuits discussed in this paper are divided into three groups: the pulse forming circuits which transform high frequency sinusoidal waves into nanosecond pulses; the pulse shaping circuits which transform pulses with slower transient response into pulses with faster transient response, and the pulse generator circuits which make use of the step recovery diodes combined with other high-speed semiconductor devices.The inherent capability and importance of the step recovery diodes in the nanosecond pulse circuits are well illustrated by the discussion of various circuits developed in this paper. Other types of new pulse circuits using step recovery diodes with more detailed analysis and practical circuits will be reported in the near future.