摘要
文章主要介绍MOS场效应管容易受到静电击穿损坏的原因,并从实际应用的角度,给出简单测量场效应管的方法,为维修和应用方面提供一定的参考价值。
This paper mainly introduces the reason why MOSFETs are easy to be damaged by electrostatic breakdown.From the point of view of practical application,a simple measurement method of MOSFETs is given,which provides certain reference value formaintenance and application.
作者
欧宝明
Ou Bao-ming(Xiamen Dnake Intelligent Technology Co.Ltd,Fujian Xiamen 361026)
出处
《电子质量》
2019年第3期65-68,共4页
Electronics Quality
关键词
MOS管
静电
击穿
检测
MOS field effect tube
static electricity
breakdown
detection
