摘要
近年来以镓为原料的Ⅲ族氮化物受到广泛的关注,为了介绍氮化镓的最新研究进展,文章以氮化镓薄膜的制备为切入点,借助学校自主研制的MOCVD系统,做了多次生长实验,总结出5条MCVD系统的优点,文章进而阐述了氮化镓在射频功率晶体管和LED方面的突破。综上所述,文章在描述学校自主研制的MOCVD系统和认识氮化镓最新发展上取得了满意的结果。
The status of the gal ium nitride has been reviewed. The achievement of the field of LED has been mainly clarified.The method of MOCVD has been introduced. The recent results of GaN base device were also given.And the further research critical areas including the GaN bulk single crystal growth have been discussed.
出处
《电子制作》
2013年第12X期38-38,共1页
Practical Electronics
