摘要
根据有效质量近似理论 ,采用无限深势阱模型研究了位于GaAs Ga1 -xAlxAs球形量子点中心的类氢离子杂质 ,讨论了量子点的囚禁作用对类氢离子杂质系统的能量和电子分布几率的影响 ,给出了某些波函数的有限形式的精确解 .并考虑了系统与外加弱电场的相互作用 。
According to the effective-mass-theory, a hydrogenic impurity located at the center of a spherical GaAsGa1-xAlxAs quantum dot is studied. Assumed the infinite depth potential well model, the confining effects of the quantum dot on the energy of the system and electron distribution probability are discussed and the wave function of the finite form is given. Meanwhile, the perturbation of an external weak electric field is considered and the first-order correct wave function and second-order correct energy are given by use of the direct perturbation method.
出处
《湖南师范大学自然科学学报》
EI
CAS
北大核心
2002年第3期38-43,共6页
Journal of Natural Science of Hunan Normal University
基金
国家自然科学基金资助的项目 (1 98740 1 9)