摘要
本文提出了改进型液态镓离子源发射体的制作方法,使制成的发射体尖端曲率半径小于0.4μm,成功率超过90％。通过时发射体特殊络合处理,增大离子源的发射电流和稳定性。降低发射阈值电压。在总引出电压为5.5 kV时,总发射束流可达250μA,阈值电压降至1 kV左右。适当选择加热温度改进和提高镓离子源的发射状态,提高离子源的性能。
The improved method of processing emitter of Ga LMIS has been discussed.The processed emitter’s curvature radius is lower than 0.4μm and the successful processing rate of emitters is more than 90%.The ion source emission current and stability can be increased by using a special treatment on the emitter tip.The emission threshold voltage can thus be decreased.When the extractive voltage is 5.5 kV,the total emission current can rearch 250 μA and the emission threshold voltage can be as low as about 1 kV.The emission state and other behavior can be improved by choosing proper heating temperature.
基金
云南省应用基础研究基金
