高k栅介质中电荷俘获行为的脉冲特征分析
被引量：1
摘要
本文介绍了电荷俘获的原理以及直流特征分析技术对俘获电荷进行定量分析的局限性,同时介绍了脉冲I-V分析技术,其能够对具有快速瞬态充电效应(FTCE)的高k栅晶体管的本征(无俘获)性能进行特征分析。
出处
《电子设计应用》
2010年第1期76-78,共3页
Electronic Design & Application World
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