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Reactions between Ti and Ti_3SiC_2 in temperature range of 1 273-1573K 被引量:1

Reactions between Ti and Ti_3SiC_2 in temperature range of 1 273-1573K
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摘要 The reactions of Ti3SiC2 and Ti in the temperature range of 1 273?1 573 K under a pressure of 20 MPa were investigated.The results confirm that Ti reacts with Ti3SiC2 above 1 273 K and new phases like TiCx,Ti5Si3 and TiSi2 are identified.The reactions are closely related to temperature and content of Ti3SiC2 in Ti.During the reaction process,Ti3SiC2 decomposes in two different modes.The first is caused by the de-intercalation of Si from it and the TiCx is formed by the remained titanium and carbon;the second is that the carbon is separated from the Ti3SiC2 and reacts with titanium furthermore.The diffusing of silicon is believed to be the determinant ingredient of the reaction. The reactions of Ti3SiC2 and Ti in the temperature range of 1 273?1 573 K under a pressure of 20 MPa were investigated.The results confirm that Ti reacts with Ti3SiC2 above 1 273 K and new phases like TiCx,Ti5Si3 and TiSi2 are identified.The reactions are closely related to temperature and content of Ti3SiC2 in Ti.During the reaction process,Ti3SiC2 decomposes in two different modes.The first is caused by the de-intercalation of Si from it and the TiCx is formed by the remained titanium and carbon;the second is that the carbon is separated from the Ti3SiC2 and reacts with titanium furthermore.The diffusing of silicon is believed to be the determinant ingredient of the reaction.
出处 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2006年第6期1281-1288,共8页 中国有色金属学报(英文版)
基金 Project(59925208) supported by the National Outstanding Young Scientist Foundation Project(59772021) supported by the National Natural Science Foundation of China
关键词 TI3SIC2 TI high-temperature REACTION Ti3SiC2 Ti high-temperature reaction
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  • 1Y. Zhou,Z. Sun. Crystallographic relations between Ti3SiC2 and TiC[J] 2000,Material Research Innovations(5):286~291
  • 2Zhimei Sun,Y. Zhou. Fluctuation synthesis and characterization of Ti3SiC2 powders[J] 1999,Material Research Innovations(4):227~231
  • 3C. Racault,F. Langlais,R. Naslain. Solid-state synthesis and characterization of the ternary phase Ti3SiC2[J] 1994,Journal of Materials Science(13):3384~3392

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